Scientists have unveiled a clever new way to “print” graphene and graphene/hBN heterostructures directly onto silicon nitride photodetectors using laser pulses. This technique, known as Laser‑Induced Forward Transfer (LIFT), could make it far easier to integrate graphene into the chips and circuits that power next‑generation electronics and optical devices.

The process works by using a laser to precisely move graphene from one surface to another, finely positioning it with light. The breakthrough method does not just work for single layers of graphene—it also successfully transfers graphene/hBN heterostructures, where graphene is combined with hexagonal boron nitride (hBN). hBN acts as a protective and stabilizing layer, helping graphene maintain its extraordinary properties.

The researchers demonstrated that they could pattern structures as small as 15 micrometers, even across uneven surfaces with step heights up to 100 nanometers. Importantly, tests showed that the graphene’s quality and electronic performance remained intact after transfer. Transistors built with this method displayed the expected ambipolar transport behavior, confirming that the material’s unique electrical characteristics were preserved.

Figure: Graphene and hBN on photodetector. Image from K. Magoula et al, phys. stat. sol. a 223, e70411 (2026).

Why does this matter? One of the biggest challenges in graphene research has been transferring it cleanly onto chips without damaging it or leaving behind unwanted residues. LIFT solves this by offering a digital, scalable, and residue‑free approach. That means graphene can finally be integrated into complex chip architectures without compromising its performance.

The implications for industry are potentially enormous. Graphene’s combination of high carrier mobility, broadband optical absorption, and ultrafast response times makes it ideal for photodetectors, sensors, and transistors. With this transfer method, industry leaders can envision graphene being used in optoelectronic platforms that enable ultra‑wide bandwidth communication, as well as in next‑generation electronics that are faster and more energy‑efficient. The research was performed in Greece, Finland and Spain, and published with Open Access in the journal physica status solidi a.

In short, this research shows that laser‑based transfer techniques can bridge the gap between graphene’s remarkable lab performance and its real‑world applications. By making it easier to integrate graphene into silicon nitride circuits, scientists are paving the way for a future of ultra‑fast, energy‑efficient devices.

The work was performed under project “Next-2Digits”, which has received funding by the EU Horizon Europe research and innovation programme under Grant agreement no: 101120651.