Multi-Project Wafer (MPW) runs are a common practice within the semiconductor ecosystem. Universities, R&D centres and start ups, which usually only need a few prototypes and operate on tight budgets, take advantage of MPW to obtain small volumes of devices at an affordable entry point. The service is carried out with a mask-sharing scheme, in which devices with different geometries but with shared device architecture are manufactured in a single fabrication run, using the same lithography mask. Such a process allows several interested customers to pay a part of the cost of the full manufacturing process, each obtaining a small number of devices with their desired geometry.  Graphenea announces an MPW with a novel process flow, with applications accepted from now until June 30. The current run will be suitable for a range of applications, from general electronics to sensing, to optoelectronics, and is expected to be delivered on September 1, 2024.

The current MPW operates on a partnership between Graphenea and the 2D Experimental Pilot Line (2D-EPL), under the auspices of the Graphene Flagship. Graphenea Semiconductor unveils a cutting-edge process flow that aims to redefine possibilities in device architecture and application versatility.

Central to this advancement is the utilization of HfOx as the dielectric material, offering superior capacitive coupling and enhanced operational efficiency at lower voltages. Complementing this, the introduction of AlOx as the passivation layer adds further resilience, withstanding the rigours of harsh solvents commonly encountered in functional environments.

This versatile framework unlocks the potential for three distinct device architectures.

DEVICE A and DEVICE C enable devices with backgates, where the gate dielectric is HfOx. The DEVICE C works with a passivated graphene channel, whereas DEVICE A has an opening on the graphene channel. DEVICE B also has an open graphene channel, but does not have a backgate. The devices can come with 2, 3, or 4 terminals, with different suggested applications.

2-Terminal Devices: These devices, featuring options for full, partial, or no dielectric encapsulation, serve as versatile chemiresistors while retaining the capability for backgating through the substrate. This versatility extends to applications such as magnetic sensing, VOC detection and gas sensing, among others.

3-Terminal Devices with Backgates: Offering similar encapsulation options, these devices present a platform for sensitization with various materials including dyes, quantum dots, and perovskites. Moreover, the flexibility extends to the creation of hybrid biosensors, where liquid gating and backgating can be alternately performed on the same device, opening new avenues for advanced sensing applications.

4-Terminal Devices: Featuring full, partial, or no dielectric encapsulation, these devices offer a diverse range of functionalities. From the creation of Hall bar devices to the integration of gas sensors with local heaters, this architecture empowers precise control over desorption phenomena on the channels, enabling fine-tuned sensing capabilities.

Despite its experimental nature within the 2D-EPL, Graphenea brings to the table a wealth of experience in fabricating Graphene Field-Effect Transistors (GFETs), having successfully manufactured over half a million units. Leveraging this expertise, our seasoned team stands ready to collaborate with you, providing invaluable insights and support through our direct communication channels.

The price for the MPW run is 3900 EUR for 4cm² (4x 1x1cm² dies or 16x 5x5mm² dies). Customers can express their interest in participation in the run, and subsequently get in touch with representatives of Graphenea Semiconductor, by filling the form on the website of the Graphene Flagship. [link here]