Monolayer Graphene on SiO2/Si (4" Wafer)
Monolayer Graphene on SiO₂/Si (4" Wafer) - Fully Covered
Our monolayer graphene on SiO2/Si (4” Wafer, fully covered) is a bidimensional material produced by CVD and transferred to a circular substrate of Si/SiO2 (300nm) by a wet transfer process. We consider it to be a benchmark product in the graphene market - not only for its excellent quality, but also for its shape, size and number of applications.
- · Transparency: > 97 %
- · Coverage: > 95%
- · Thickness (theoretical): 0.345 nm
- · FET Electron Mobility on Al2O3: 2000 cm2/Vs
- · Hall Electron Mobility on SiO2/Si: 2000-3500 cm2/Vs
- · Sheet Resistance: 450±40 Ohms/sq (1cm x1cm)
- · Grain size: Up to 10 μm
- · Dry Oxide Thickness: 300 nm (+/-5%)
- · Type/Dopant: P/Bor
- · Orientation: <100>
- · Resistivity: <0.005 ohm·cm
- · Thickness: 525 +/- 20 μm
- · Front surface: Single Side Polished
- · Back Surface: Etched
- · Particles: <email@example.com μm
All our samples are subjected to a rigorous QC in order to ensure a high quality and reproducibility of the graphene. Each batch must pass the following tests:
- · Raman Spectroscopy: I(G)/I(2D)<0.7; I(D)/I(G)<0.05
- · Optical Microscopy inspection of each individual sample to ensure good transfer quality and purity
If your application requires more specific controls (AFM, SEM...) please do not hesitate to contact us.
Graphene research, Graphene transistors and electronic applications, Graphene optoelectronics, plasmonics and nanophotonics, Graphene photodetectors (measure photon flux or optical power), Biosensors and bioelectronics, Aerospace industry (electronics, thermal interface materials, etc.), MEMS and NEMS
“Recent advances in graphene-based biosensors”, 2011; doi: 10.1016/j.bios.2011.05.039. “Optical nano-imaging of gate-tunable graphene plasmons”, Nature 487, 77-81 (05 July 2012), vol. 487, page 77, doi: 10.1038/nature11254
"Graphene Frequency Multipliers", Electron Device Letters, IEEE, vol. 30, Issue:5; doi: 10.1109/LED.2009.2016443
Frequently Asked Questions
A: It has to be done in a dry way. Two alternatives: 1) Use a diamond pen to cleave it, but then you can have some debris on the graphene due to the Si wafer cleavage 2) In order to protect it from the debris, you can cleave it using a protective layer such as the PMMA on top of graphene. After cut it with a diamond pen remove the PMMA with solvents. In this case, we can provide you the sample with the PMMA already on top.
A: Usually additional cleaning process is not needed to obtain good electronics results using our graphene directly. If additional cleaning is needed a "thermal annealing" can be applied, typically at 350-400C under inert atmosphere for 30mins but this recipe depends on the annealing oven to be used.
A: The electron mobility values depend heavily on the method used to determine them but typical Hall mobility values for our graphene samples are around 2000-2700 cm^2/Vs with very good uniformity. These mobility values apply to your samples as well since they were manufactured using the same methods (recipe, transfer, etc.).
Questions and answers about this Product
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