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Monolayer Graphene on SiO2/Si (4" Wafer)

$849.00

Monolayer Graphene on SiO2/Si 4inches wafer
Monolayer Graphene on SiO2/Si 4inches wafer
Raman spectrum
Optical microscopy
SEM
TEM
Formula

Monolayer Graphene on SiO2/Si (4" Wafer)

$849.00

Monolayer Graphene on SiO₂/Si (4" Wafer) - Fully Covered

Our monolayer graphene on SiO2/Si (4” Wafer, fully covered) is a bidimensional material produced by CVD and transferred to a circular substrate of Si/SiO2 (300nm) by a wet transfer process. We consider it to be a benchmark product in the graphene market - not only for its excellent quality, but also for its shape, size and number of applications.

Graphene Film

  • Transparency: >97 %
  • Coverage: >95%
  • Thickness (theoretical): 0.345 nm
  • FET Electron Mobility on Al2O3: 2000 cm2/Vs
  • Hall Electron Mobility on SiO2/Si: 4000 cm2/Vs
  • Sheet Resistance: 450±40 Ohms/sq (1cm x1cm)
  • Grain size: Up to 10 μm

Substrate SiO2/Si

  • Dry Oxide Thickness: 300 nm (+/-5%)
  • Type/Dopant: P/Bor
  • Orientation: <100> 
  • Resistivity: <0.005 Ohm·cm
  • Thickness: 525 +/- 20 μm
  • Front surface: Single Side Polished
  • Back Surface: Etched
  • Particles: <10@0.3 μm

Quality control

All our samples are subjected to a rigorous QC in order to ensure a high quality and reproducibility of the graphene. Each batch must pass the following tests:

  • Raman Spectroscopy: I(G)/I(2D)<0.7; I(D)/I(G)<0.05
  • Optical Microscopy inspection of each individual sample to ensure good transfer quality and purity

If your application requires more specific controls (AFM, SEM...) please do not hesitate to contact us.

Applications

Graphene research, Graphene transistors and electronic applications, Graphene optoelectronics, plasmonics and nanophotonics, Graphene photodetectors (measure photon flux or optical power), Biosensors and bioelectronics, Aerospace industry (electronics, thermal interface materials, etc.), MEMS and NEMS

 Data Sheet Graphene Film         MSDS Graphene Film