Monolayer Graphene on SiO2/Si (4" Wafer)

Monolayer Graphene on SiO2/Si 4inches wafer

Graphenea Customers

Monolayer Graphene on SiO₂/Si (4" Wafer) - Fully Covered

Our monolayer graphene on SiO2/Si (4” Wafer, fully covered) is a bidimensional material produced by CVD and transferred to a circular substrate of Si/SiO2 (300nm) by a wet transfer process. We consider it to be a benchmark product in the graphene market - not only for its excellent quality, but also for its shape, size and number of applications.

Graphene Film

  • Transparency: >97 %
  • Coverage: >95%
  • Thickness (theoretical): 0.345 nm
  • FET Electron Mobility on Al2O3: 2000 cm2/Vs
  • FET Electron Mobility on SiO2/Si: 4000 cm2/Vs
  • Grain size: Up to 10 μm

Substrate SiO2/Si

  • Dry Oxide Thickness: 300 nm (+/-5%)
  • Type/Dopant: P/Bor
  • Orientation: <100> 
  • Resistivity: <0.005 Ohm·cm
  • Thickness: 525 +/- 20 μm
  • Front surface: Single Side Polished
  • Back Surface: Etched
  • Particles: <10@0.3 μm

Applications

Graphene research, Graphene transistors and electronic applications, Graphene optoelectronics, plasmonics and nanophotonics, Graphene photodetectors (measure photon flux or optical power), Biosensors and bioelectronics, Aerospace industry (electronics, thermal interface materials, etc.), MEMS and NEMS

€645.00


Fast delivery on all orders and orders over €500 are delivered for free. Do you want to make a bulk order? Yes. Or, do you want to set-up a recurring order? Yes. Any questions? Email us at info@graphenea.com or sales@graphenea.com