Monolayer Graphene on SiO2/Si (4" Wafer)
Monolayer Graphene on SiO2/Si

Graphenea Customers
Monolayer Graphene (60 mm x 40 mm) on SiO₂/Si (4" Wafer)

Graphene film

Growth Method: CVD synthesis. Transfer Method: Clean transfer method. Quality Control:  Optical Microscopy, Raman, SEM and TEM batch checked. Appearance (Color): Transparent. Transparency  >97%. Appearance (Form):  Film. Coverage  >95%. Number of graphene layers  1. Thickness (theoretical)  0.345 nm. FET mobility on Al₂O₃ 2,800 cm2/V·s. Hall mobility on SiO₂ 3,500 cm2/V·s. Sheet Resistance  170 Ohms/sq. Grain size: Up to 10 μm

Substrate SiO₂/Si

Type/Dopant: P/Bor. Orientation  <100>. Growth Method: CZ. Resistivity: 1-30 ohm cm. Thickness: 525 +/- 25 µm. Front Surface: polished. Back Surface: etched. Flats: 2 SEMI. Coating  300 nm thermal oxide on both wafer sides.

€1,199.00


Fast delivery on all orders and orders over €500 are delivered for free. Do you want to make a bulk order? Yes. Or, do you want to set-up a recurring order? Yes. Any questions? Email us at info@graphenea.com or sales@graphenea.com