Monolayer Graphene on SiO2/Si (4" Wafer)
Growth Method: CVD synthesis. Transfer Method: Clean transfer method. Quality Control: Optical Microscopy, Raman, SEM and TEM batch checked. Appearance (Color): Transparent. Transparency >97%. Appearance (Form): Film. Coverage >95%. Number of graphene layers 1. Thickness (theoretical) 0.345 nm. FET mobility on Al₂O₃ 2,800 cm2/V·s. Hall mobility on SiO₂ 3,500 cm2/V·s. Sheet Resistance 170 Ohms/sq. Grain size: Up to 10 μm
Type/Dopant: P/Bor. Orientation <100>. Growth Method: CZ. Resistivity: 1-30 ohm cm. Thickness: 525 +/- 25 µm. Front Surface: polished. Back Surface: etched. Flats: 2 SEMI. Coating 300 nm thermal oxide on both wafer sides.
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Tell us what kind of graphene you need and we will produce it for you. Our knowledge and equipment mean almost any need can be met and on any scale - research, pilot line and industrial. To discuss your customised graphene requirements, provide your details using the...
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