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GFAB - Graphene Foundry Services


GFAB - Graphene Foundry Services


GFAB - Graphene Foundry Services

Graphenea offers Graphene Foundry Services on custom wafers up to 6'' with customized design. This enable fast device prototyping and accelerates the development towards your application.

Processing Specifications:

  • · Batch Size: 1-3 wafers
  • · Mask: according to design rules, and can be printed by customer or Graphenea
  • · Graphene growth and transfer on 4’’ and 6’’ wafers
  • · Ni/Al edge contacts
  • · Minimum feature size: 5 μm
  • · Dicing included

Quality control

All our samples are subjected to a rigorous QC in order to ensure a high quality products.

  • · Raman Spectroscopy: I(G)/I(2D)<0.5; I(D)/I(G)<0.1
  • · Optical Microscopy inspection 
  • · Electrical conductivity on test structures


Graphene field effect transistors on flexible substrate: Stable process and high RF performance"; DOI: 10.1109/EuMIC.2016.7777516

“High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide", Scientific Reports volume 7, Article number: 2419(2017doi:10.1038/s41598-017-02541-2


  •   Design Rules  
  •   Mask Aligners Template
    On request

Frequently Asked Questions

A: It has to be done under dry conditions. When using wafers such as Si or quartz a diamond pen can be used to cleave it. In order to protect the graphene film from debris, we recommend doing it with the protective PMMA layer on top of graphene. In this case, we can provide you the sample with the PMMA on top.

When using thin substrates such as PEN or PEN you can easily cut them using scissors.

A: In principle, additional cleaning is not needed and you can use our graphene directly. However, thermal annealing can be applied, typically at 250-400C under inert atmosphere in order to have a cleaner graphene and to reduce absorbents on the graphene surface.

A: Our graphene on SiO2 is p-doped, with a charge carrier density of around 1013 cm-2. This intrinsic doping can be reduced by at least one order of magnitude by thermal treatments, which lower the Dirac voltage down to 40-80 V. Another alternative is using a passivation layer on top of the graphene, which prevents the presence of water between the substrate and the graphene film.

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