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Trilayer Graphene Film 10x10mm

Graphenea

Trilayer Graphene on SiO2/Si (10 mm x 10 mm)

$152.00

Trilayer Graphene film on SiO₂/Si 10 mm x 10 mm (non AB Bernal stacking) - Processed in Clean Room Class 1000

The trilayer graphene product consists of three CVD monolayers produced by multiple transfer on a SiO2/Si substrate. Lower sheet resistance values can be obtained when compared to monolayer samples.

The product can be prepared in other substrate if required (PET, Quartz).

Graphene Film

  • · Transparency: >92 %
  • · Color: Transparent
  • · Coverage: >95%
  • · Number of graphene layers: 3
  • · Thickness (theoretical): 1.035 nm
  • · Sheet resistance: 126 +/- 6 Ohms/sq (1 cm x 1 cm)
  • · Grain size: Up to 10 μm

Substrate SiO2/Si 

  • · Dry Oxide Thickness: 300 nm (+/-5%)
  • · Type/Dopant: P/Bor
  • · Orientation: <100>
  • · Resistivity: <0.005 Ohm·cm
  • · Thickness: 525 +/- 25 μm
  • · Front surface: Single Side Polished
  • · Back Surface: Etched
  • · Particles: <10@0.3 μm

Applications

  • · Transparent conductors
  • · Graphene transistors and electronics applications

NOTE: "The impurity levels are higher that in monolayer films due to multiple transfer process"

Downloads

$152.00

Frequently Asked Questions

A: It has to be done under dry conditions. When using wafers such as Si or quartz a diamond pen can be used to cleave it. In order to protect the graphene film from debris, we recommend doing it with the protective PMMA layer on top of graphene. In this case, we can provide you the sample with the PMMA on top.

When using thin substrates such as PEN or PEN you can easily cut them using scissors.

A: In principle, additional cleaning is not needed and you can use our graphene directly. However, thermal annealing can be applied, typically at 250-400C under inert atmosphere in order to have a cleaner graphene and to reduce absorbents on the graphene surface.

A: Our graphene on SiO2 is p-doped, with a charge carrier density of around 1013 cm-2. This intrinsic doping can be reduced by at least one order of magnitude by thermal treatments, which lower the Dirac voltage down to 40-80 V. Another alternative is using a passivation layer on top of the graphene, which prevents the presence of water between the substrate and the graphene film.


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