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Trilayer Graphene on SiO2/Si (10 mm x 10 mm)

$857.00

Trilayer Graphene Film 10x10mm
Trilayer Graphene Film 10x10mm
Optical microscopy
SEM

Trilayer Graphene on SiO2/Si (10 mm x 10 mm)

$857.00

Trilayer Graphene film on SiO₂/Si 10 mm x 10 mm (non AB Bernal stacking)

The trilayer graphene product consists of three CVD monolayers produced by multiple transfer on a SiO2/Si substrate. Lower sheet resistance values can be obtained when compared to monolayer samples.

The product can be prepared in other substrate if required (PET, Quartz).

Graphene Film

  • Transparency: >92 %
  • Color: Transparent
  • Coverage: >95%
  • Number of graphene layers: 3
  • Thickness (theoretical): 1.035 nm
  • Grain size: Up to 10 μm

Substrate SiO2/Si

  • Dry Oxide Thickness: 300 nm
  • Type/Dopant: P/Bor
  • Orientation: <100>
  • Resistivity: 1 – 30 ohm cm
  • Thickness: 525 +/- 25 μm
  • Front surface: Single Side Polished
  • Back Surface: Etched

Applications

  • Transparent conductors
  • Graphene transistors and electronics applications

 

NOTE:  "The impurity levels are higher that in monolayer films due to multiple transfer process"