Trilayer Graphene on SiO2/Si (10 mm x 10 mm)
Trilayer Graphene film on SiO₂/Si 10 mm x 10 mm (non AB Bernal stacking)
The trilayer graphene product consists of three CVD monolayers produced by multiple transfer on a SiO2/Si substrate. Lower sheet resistance values can be obtained when compared to monolayer samples.
The product can be prepared in other substrate if required (PET, Quartz).
- · Transparency: >92 %
- · Color: Transparent
- · Coverage: >95%
- · Number of graphene layers: 3
- · Thickness (theoretical): 1.035 nm
- · Grain size: Up to 10 μm
- · Dry Oxide Thickness: 300 nm
- · Type/Dopant: P/Bor
- · Orientation: <100>
- · Resistivity: 1 – 30 ohm cm
- · Thickness: 525 +/- 25 μm
- · Front surface: Single Side Polished
- · Back Surface: Etched
- · Transparent conductors
- · Graphene transistors and electronics applications
Frequently Asked Questions
A: It has to be done in a dry way. Two alternatives: 1) Use a diamond pen to cleave it, but then you can have some debris on the graphene due to the Si wafer cleavage 2) In order to protect it from the debris, you can cleave it using a protective layer such as the PMMA on top of graphene. After cut it with a diamond pen remove the PMMA with solvents. In this case, we can provide you the sample with the PMMA already on top.
A: Usually additional cleaning process is not needed to obtain good electronics results using our graphene directly. If additional cleaning is needed a "thermal annealing" can be applied, typically at 350-400C under inert atmosphere for 30mins but this recipe depends on the annealing oven to be used.
A: The electron mobility values depend heavily on the method used to determine them but typical Hall mobility values for our graphene samples are around 2000-2700 cm^2/Vs with very good uniformity. These mobility values apply to your samples as well since they were manufactured using the same methods (recipe, transfer, etc.).
Questions and answers about this Product
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