Trilayer Graphene on SiO2/Si (10 mm x 10 mm)
Trilayer Graphene film on SiO₂/Si 10 mm x 10 mm (non AB Bernal stacking)
This product consists of three layers of CVD grown graphene deposited on a SiO2/Si substrate. Our trilayer samples are manufactured via multiple transfers rather than in situ growth on copper.
Lower sheet resistance values can be obtained when compared to monolayer and bilayer samples.
- Transparency: >92 %
- Color: Transparent
- Coverage: >95%
- Number of graphene layers: 3
- Thickness (theoretical): 0.345 nm x 3 = 1.035 nm
- Sheet Resistance: 80 Ohms/sq
- Grain size: Up to 10 μm
- Dry Oxide Thickness: 300 nm
- Type/Dopant: P/Bor
- Orientation: <100>
- Resistivity: 1 – 30 ohm cm
- Thickness: 525 +/- 25 μm
- Front surface: Single Side Polished
- Back Surface: Etched
- Transparent conductors
Graphene transistors and electronics applications
NOTE: "The impurity levels are higher that in monolayer films due to multiple transfer process"
Fast delivery on all orders and orders over €500 are delivered for free. Do you want to make a bulk order? Yes. Or, do you want to set-up a recurring order? Yes. Any questions? Email us at firstname.lastname@example.org or email@example.com
Custom Graphene Orders
Tell us what kind of graphene you need and we will produce it for you. Our knowledge and equipment mean almost any need can be met and on any scale - research, pilot line and industrial.To discuss your customised graphene requirements, provide your details using the below...
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