Trilayer Graphene on SiO2/Si (10 mm x 10 mm)

Trilayer Graphene Film 10x10mm

Graphenea Customers

Trilayer Graphene film on SiO₂/Si 10 mm x 10 mm (non AB Bernal stacking)

This product consists of three layers of CVD grown graphene deposited on a SiO2/Si substrate. Our trilayer samples are manufactured via multiple transfers rather than in situ growth on copper.

Lower sheet resistance values can be obtained when compared to monolayer and bilayer samples.

Graphene Film

  • Transparency: >92 %
  • Color: Transparent
  • Coverage: >95%
  • Number of graphene layers: 3
  • Thickness (theoretical): 0.345 nm x 3 = 1.035 nm
  • Grain size: Up to 10 μm

Substrate SiO2/Si

  • Dry Oxide Thickness: 300 nm
  • Type/Dopant: P/Bor
  • Orientation: <100>
  • Resistivity: 1 – 30 ohm cm
  • Thickness: 525 +/- 25 μm
  • Front surface: Single Side Polished
  • Back Surface: Etched


  • Transparent conductors
  • Graphene transistors and electronics applications


NOTE:  "The impurity levels are higher that in monolayer films due to multiple transfer process"


Fast delivery on all orders and orders over €500 are delivered for free. Do you want to make a bulk order? Yes. Or, do you want to set-up a recurring order? Yes. Any questions? Email us at or