Monolayer Graphene on SiO2/Si (10mm x 10mm) - Pack 4 units

Monolayer Graphene on SiO2/Si 10x10mm

Graphenea Customers

Monolayer Graphene 10 mm x 10 mm on SiO₂/Si - Pack 4 units

Graphene on SiO2/Si, monolayer - bidimensional material produced by CVD, grown on copper and transferred to a SiO2/Si substrate by a wet transfer process. 

The result is a high quality product with a great homogeneity. The graphene film is > 97% transparent and the FET mobility on Al2O3 is about 2.800cm2/Vs. This product is ideal for R&D departments and universities.

Graphene Film

  • Transparency: >97 %
  • Coverage: >95%
  • Thickness (theoretical): 0.345 nm
  • FET Electron Mobility on Al2O3: 2000 cm2/Vs
  • FET Electron Mobility on SiO2/Si: 4000 cm2/Vs
  • Grain size: Up to 10 μm

Substrate SiO2/Si

  • Dry Oxide Thickness: 300 nm (+/-5%)
  • Type/Dopant: P/Bor
  • Orientation: <100> 
  • Resistivity: <0.005 Ohm·cm
  • Thickness: 525 +/- 20 μm
  • Front surface: Single Side Polished
  • Back Surface: Etched
  • Particles: <10@0.3 μm


Graphene research, Graphene transistors and electronic applications, Graphene optoelectronics, plasmonics and nanophotonics, Graphene photodetectors (measure photon flux or optical power), Biosensors and Bioelectronics, Aerospace industry (electronics, thermal interface materials, etc.), MEMS and NEMS


“Recent advances in graphene-based biosensors”, 2011; doi: 10.1016/j.bios.2011.05.039.

“Optical nano-imaging of gate-tunable graphene plasmons”, Nature 487, 77-81 (05 July 2012), vol. 487, page 77, doi: 10.1038/nature11254

"Graphene Frequency Multipliers", Electron Device Letters, IEEE, vol. 30, Issue:5; doi: 10.1109/LED.2009.2016443


Fast delivery on all orders and orders over €500 are delivered for free. Do you want to make a bulk order? Yes. Or, do you want to set-up a recurring order? Yes. Any questions? Email us at or