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Monolayer Graphene on SiO2/Si 10x10mm


Monolayer Graphene on SiO2/Si (10mm x 10mm) - Pack 4 units


Monolayer Graphene 10 mm x 10 mm on SiO₂/Si - Pack 4 units

Monolayer Graphene produced by CVD on copper catalyst and transferred to a SiO2/Si substrate using wet transfer process. 

This product is ideal for R&D departments and universities.

Graphene Film

  • · Transparency: > 97 %
  • · Coverage: > 95%
  • · Thickness (theoretical): 0.345 nm
  • · FET Electron Mobility on Al2O3: 2000 cm2/Vs
  • · Hall Electron Mobility on SiO2/Si: 4000 cm2/Vs
  • · Sheet Resistance: 450±40 Ohms/sq (1cm x1cm)
  • ·Grain size: Up to 10 μm

Substrate SiO2/Si

  • · Dry Oxide Thickness: 300 nm (+/-5%)
  • · Type/Dopant: P/Bor
  • · Orientation: <100>
  • · Resistivity: <0.005 ohm="" cm="" li="">
  • · Thickness: 525 +/- 20 μm
  • · Front surface: Single Side Polished
  • · Back Surface: Etched
  • · Particles: <10@0.3 μm

Quality control

Our Graphene Oxide is subjected to a rigorous QC in order to ensure a high quality and reproducibility.

  • · Raman Spectroscopy: I(G)/I(2D)<0.7; I(D)/I(G)<0.05
  • · Optical Microscopy inspection of each individual sample to ensure good transfer quality and purity

If your application requires more specific quality control, please do not hesitate to contact us.


Graphene research, Graphene transistors and electronic applications, Graphene optoelectronics, plasmonics and nanophotonics. Graphene photodetectors (measure photon flux or optical power), Biosensors and bioelectronics, Aerospace industry (electronics, thermal interface materials, etc.), MEMS and NEMS


“Recent advances in graphene-based biosensors”, 2011; doi: 10.1016/j.bios.2011.05.039. “Optical nano-imaging of gate-tunable graphene plasmons”, Nature 487, 77-81 (05 July 2012), vol. 487, page 77, doi: 10.1038/nature11254 "Graphene Frequency Multipliers", Electron Device Letters, IEEE, vol. 30, Issue:5; doi: 10.1109/LED.2009.2016443



Frequently Asked Questions

A: It has to be done in a dry way. Two alternatives: 1) Use a diamond pen to cleave it, but then you can have some debris on the graphene due to the Si wafer cleavage 2) In order to protect it from the debris, you can cleave it using a protective layer such as the PMMA on top of graphene. After cut it with a diamond pen remove the PMMA with solvents. In this case, we can provide you the sample with the PMMA already on top.

A: Usually additional cleaning process is not needed to obtain good electronics results using our graphene directly. If additional cleaning is needed a "thermal annealing" can be applied, typically at 350-400C under inert atmosphere for 30mins but this recipe depends on the annealing oven to be used.

A: The electron mobility values depend heavily on the method used to determine them but typical Hall mobility values for our graphene samples are around 2000-2700 cm^2/Vs with very good uniformity. These mobility values apply to your samples as well since they were manufactured using the same methods (recipe, transfer, etc.).

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