Monolayer Graphene on SiO2/Si (1 inch x 1 inch)

Monolayer Graphene on SiO2/Si 1x1 inch

Graphenea Customers

Monolayer Graphene film on SiO₂/Si 1 inch x 1 inch (25 mm x 25 mm)

Graphene on SiO2/Si, monolayer - bidimensional material produced by CVD, grown on copper and transferred to a SiO2/Si substrate by a wet transfer process.

The result is high quality graphene with a great homogeneity. The graphene film is > 97% transparent and the FET mobility on Al2O3 is about 2.800cm2/Vs. This graphene product is ideal for R&D departments and universities.

Graphene Film

  • Transparency: > 97 %
  • Coverage: > 95%
  • Thickness (theoretical): 0.345 nm
  • FET Electron Mobility on Al2O3: 2000 cm2/Vs
  • FET Electron Mobility on SiO2/Si: 4000 cm2/Vs
  • Grain size: Up to 10 μm

Substrate SiO2/Si

  • Dry Oxide Thickness: 300 nm (+/-5%)
  • Type/Dopant: P/Bor
  • Orientation: <100> 
  • Resistivity: <0.005 Ohm·cm
  • Thickness: 525 +/- 20 μm
  • Front surface: Single Side Polished
  • Back Surface: Etched
  • Particles: <10@0.3 μm


Graphene research, Graphene transistors and electronic applications, Graphene optoelectronics, plasmonics and nanophotonics. Graphene photodetectors (measure photon flux or optical power), Biosensors and bioelectronics, Aerospace industry (electronics, thermal interface materials, etc.), MEMS and NEMS


“Recent advances in graphene-based biosensors”, 2011; doi: 10.1016/j.bios.2011.05.039

“Imaging propagating and localized graphene plasmons by scattering-type SNOM”, Nature 2012, vol. 487, 77 – 81; doi:10.1038/nature11254


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