Bilayer Graphene on SiO2/Si (10 mm x 10 mm)
Bilayer Graphene film on SiO₂/Si 10 mm x 10 mm (non AB Bernal stacking)
This bilayer graphene product consists of two layers CVD grown graphene deposited on a SiO2/Si substrate. Lower sheet resistance values can be obtained when compared to monolayer samples.
The bilayer samples are manufactured via multiple transfers rather than in situ growth on copper.
- Transparency: >94 %
- Color: Transparent
- Coverage: >95%
- Number of graphene layers: 2
- Thickness (theoretical): 0.345 nm x 2 = 0.69 nm
- Grain size: Up to 10 μm
- Dry Oxide Thickness: 300 nm (+/-5%)
- Type/Dopant: P/Bor
- Orientation: <100>
- Resistivity: <0.005 Ohm·cm
- Thickness: 525 +/- 20 μm
- Front surface: Single Side Polished
- Back Surface: Etched
- Particles: <firstname.lastname@example.org μm
- Transparent conductors in OLEDs, LEDs, solar cells, etc...
Graphene transistors and electronic applications
“Graphene Position Paper, Nanonewsletter”, December 2011
By F. Bonaccorso, J. Coraux, C. Ewels, G. Fiori, A. C. Ferrari, J-C. Gabriel, M. Garcia-Hernandez, J. Kinaret, M. Lemme, D. Neumaier, V. Palermo, A. Zenasni, S. Roche
NOTE: "The impurity levels are higher that in monolayer films due to multiple transfer process"
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