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Bilayer Graphene on SiO2/Si (10 mm x 10 mm)


Bilayer Graphene Film
Bilayer Graphene Film
Bilayer Graphene Optical Microscopy
Bilayer Graphene SEM
Bilayer Graphene TEM Bilayer

Bilayer Graphene on SiO2/Si (10 mm x 10 mm)


Bilayer Graphene on SiO₂/Si 10 mm x 10 mm (non AB Bernal stacking)

The trilayer graphene product consists of three CVD monolayers produced by multiple transfer on a SiO2/Si substrate. Lower sheet resistance values can be obtained when compared to monolayer samples.

The product can be prepared in other substrate if required (PET, Quartz).

Graphene Film

  • Transparency: >94 %
  • Color: Transparent
  • Coverage: >95%
  • Number of graphene layers: 2
  • Thickness (theoretical): 0.69 nm
  • Sheet resistance: 330±30 Ohms/sq (1cm x 1cm) 
  • Grain size: Up to 10 μm

Substrate SiO2/Si 

  • Dry Oxide Thickness: 300 nm (+/-5%)
  • Type/Dopant: P/Bor
  • Orientation: <100> 
  • Resistivity: <0.005 Ohm·cm
  • Thickness: 525 +/- 20 μm
  • Front surface: Single Side Polished
  • Back Surface: Etched
  • Particles: <10@0.3 μm


  • Transparent conductors in OLEDs, LEDs, solar cells, etc...
  • Graphene transistors and electronic applications


“Graphene Position Paper, Nanonewsletter”, December 2011

By F. Bonaccorso, J. Coraux, C. Ewels, G. Fiori, A. C. Ferrari, J-C. Gabriel, M. Garcia-Hernandez, J. Kinaret, M. Lemme, D. Neumaier, V. Palermo, A. Zenasni, S. Roche

NOTE: "The impurity levels are higher that in monolayer films due to multiple transfer process"