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Bilayer Graphene Film


Bilayer Graphene on SiO2/Si (10 mm x 10 mm)


Bilayer Graphene on SiO₂/Si 10 mm x 10 mm (non AB Bernal stacking)

The bilayer graphene product consists of two CVD layers produced by multiple transfer on a SiO2/Si substrate. Lower sheet resistance values can be obtained when compared to monolayer samples. The product can be prepared in other substrate if required (PET, Quartz).

Graphene Film

  • · Transparency: >94 %
  • · Color: Transparent
  • · Coverage: >95%
  • · Number of graphene layers: 2
  • · Thickness (theoretical): 0.69 nm
  • · Sheet resistance: 190±30 Ohms/sq (1cm x 1cm)
  • · Grain size: Up to 10 μm

Substrate SiO2/Si 

  • · Dry Oxide Thickness: 300 nm (+/-5%)
  • · Type/Dopant: P/Bor
  • · Orientation: <100>
  • · Resistivity: <0.005 Ohm·cm
  • · Thickness: 525 +/- 20 μm
  • · Front surface: Single Side Polished
  • · Back Surface: Etched
  • · Particles: <10@0.3 μm


Our Graphene Oxide is subjected to a rigorous QC in order to ensure a high quality and reproducibility.

  • · Transparent conductors in OLEDs, LEDs, solar cells, etc...
  • · Graphene transistors and electronic applications

If your application requires more specific quality control, please do not hesitate to contact us.


“Graphene Position Paper, Nanonewsletter”, December 2011

By F. Bonaccorso, J. Coraux, C. Ewels, G. Fiori, A. C. Ferrari, J-C. Gabriel, M. Garcia-Hernandez, J. Kinaret, M. Lemme, D. Neumaier, V. Palermo, A. Zenasni, S. Roche

NOTE: "The impurity levels are higher that in monolayer films due to multiple transfer process"


Frequently Asked Questions

A: It has to be done in a dry way. Two alternatives: 1) Use a diamond pen to cleave it, but then you can have some debris on the graphene due to the Si wafer cleavage 2) In order to protect it from the debris, you can cleave it using a protective layer such as the PMMA on top of graphene. After cut it with a diamond pen remove the PMMA with solvents. In this case, we can provide you the sample with the PMMA already on top.

A: Usually additional cleaning process is not needed to obtain good electronics results using our graphene directly. If additional cleaning is needed a "thermal annealing" can be applied, typically at 350-400C under inert atmosphere for 30mins but this recipe depends on the annealing oven to be used.

A: The electron mobility values depend heavily on the method used to determine them but typical Hall mobility values for our graphene samples are around 2000-2700 cm^2/Vs with very good uniformity. These mobility values apply to your samples as well since they were manufactured using the same methods (recipe, transfer, etc.).

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