Bilayer Graphene on SiO2/Si (10 mm x 10 mm)
Bilayer Graphene film on SiO₂/Si 10 mm x 10 mm (non AB Bernal stacking)
This bilayer graphene product consists of two layers CVD grown graphene deposited on a SiO2/Si substrate. Lower sheet resistance values can be obtained when compared to monolayer samples.
The bilayer samples are manufactured via multiple transfers rather than in situ growth on copper.
- Transparency: >94 %
- Color: Transparent
- Coverage: >95%
- Number of graphene layers: 2
- Thickness (theoretical): 0.345 nm x 2 = 0.69 nm
- Grain size: Up to 10 μm
- Dry Oxide Thickness: 300 nm
- Type/Dopant: P/Bor
- Orientation: . Resistivity: 1 – 30 ohm cm
- Thickness: 525 +/- 25 μm
- Front surface: Single Side Polished
- Back Surface: Etched
- Transparent conductors in OLEDs, LEDs, solar cells, etc...
Graphene transistors and electronic applications
“Graphene Position Paper, Nanonewsletter”, December 2011
By F. Bonaccorso, J. Coraux, C. Ewels, G. Fiori, A. C. Ferrari, J-C. Gabriel, M. Garcia-Hernandez, J. Kinaret, M. Lemme, D. Neumaier, V. Palermo, A. Zenasni, S. Roche
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Custom Graphene Orders
Tell us what kind of graphene you need and we will produce it for you. Our knowledge and equipment mean almost any need can be met and on any scale - research, pilot line and industrial.To discuss your customised graphene requirements, provide your details using the below...
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